This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
• 1.7 A, 20 V.
RDS(ON) = 0.07 Ω @ VGS = 4.5 V
RDS(ON) = 0.100 Ω @ VGS = 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.
• DC/DC converter
• Load switch