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FDN335N

  

Datasheet PDF

Part NameFDN335N HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
Description20V N-Channel Enhancement Mode MOSFET
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FDN335N image

VDS= 20VΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ

Features
   Advanced trench process technology
   High Density Cell Design For Ultra Low On-Resistance

 

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