General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features
• –7 A, –30 V  RDS(ON)= 23 mΩ@ VGS= –10 V
                   RDS(ON)= 35 mΩ@ VGS= –4.5 V
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

Applications
• Power management
• Load switch
• Battery protection