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FQAF17P10

  

Datasheet PDF

Part NameFQAF17P10 Fairchild
Fairchild Semiconductor Fairchild
Description100V P-Channel MOSFET
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FQAF17P10 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
• -12.4A, -100V, RDS(on) = 0.19Ω @VGS = -10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

 

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