Description
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
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