MFG CO.
Fairchild Semiconductor
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits.
• Low RDs(on)
• VGS Rated at ± 20V
• Silicon Gate for Fast Switching Speeds
• IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
Part Name
Description
PDF
MFC CO.
N-Channel Power MOSFETs, 3.0A, 350-400V
ARTSCHIP ELECTRONICS CO.,LMITED.
N-Channel Power MOSFETs, 3.0A, 350-400V
Unspecified
N-Channel Power MOSFETs, 2.25 A, 350-400 V
New Jersey Semiconductor
N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
New Jersey Semiconductor
N-Channel Power MOSFETs 3.0A, 450V/500V
ARTSCHIP ELECTRONICS CO.,LMITED.
N-Channel Power MOSFETs, 2.25 A, 350-400V
Unspecified
N-Channel Power MOSFETs, 2.25 A, 350-400V
ARTSCHIP ELECTRONICS CO.,LMITED.
400 V N-channel MOSFET
Kersemi Electronic Co., Ltd.
30 V, 350 mA N-channel Trench MOSFET
NXP Semiconductors.
N-Channel Power Mosfets
ARTSCHIP ELECTRONICS CO.,LMITED.