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IRF630N

  

Datasheet PDF

Part NameIRF630N KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
DescriptionN-Channel MOSFET Transistor
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IRF630N image

DESCRIPTION
● Drain Current –ID=9.3A@ TC=25℃
● Drain Source Voltage-
   : VDSS= 200V(Min)
● Static Drain-Source On-Resistance
   : RDS(on) = 0.3Ω(Max)
● Fast Switching Speed
● Low Drive Requirement

APPLICATIONS
● This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

 

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