MFG CO.
Fairchild Semiconductor
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.
• Low RDS(on)
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on). Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
Part Name
Description
PDF
MFC CO.
N-Channel Power MOSFETs, 2.25 A, 350-400 V
New Jersey Semiconductor
N-Channel Power MOSFETs, 2.25 A, 350-400V
ARTSCHIP ELECTRONICS CO.,LMITED.
N-Channel Power MOSFETs, 2.25 A, 350-400V
Unspecified
N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
New Jersey Semiconductor
N-Channel Power MOSFETs, 3.0A, 350-400V
ARTSCHIP ELECTRONICS CO.,LMITED.
N-Channel Power MOSFETs, 3.0A, 350-400V
Unspecified
Ignition IGBT 20 A, 350 V, N−Channel D2PAK ( Rev : 2016 )
Littelfuse, Inc
20 A, 350 V, N-Channel Ignition IGBT, D2PAK
Littelfuse, Inc
N-Channel Power MOSFETs, 4.5 A, 450 V/500 V
New Jersey Semiconductor
N-Channel Power MOSFETs, 30 A, 150 V/200 V
New Jersey Semiconductor