MFG CO.
Intersil
This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Part Name
Description
PDF
MFC CO.
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs ( Rev : 1999 )
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19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
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0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET ( Rev : V2 )
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100V P-Channel MOSFET
Fairchild Semiconductor