Qdatasheet_Logo    Integrated circuits, Transistor, Semiconductors Search and Free Datasheet PDF Download Site
Part Number :
Home >>> IR >>> IRG4RC10S Datasheet

IRG4RC10S

  

Datasheet PDF

Part NameIRG4RC10S IR
International Rectifier IR
DescriptionINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
PDF Download   
IRG4RC10S image

Features
• Extremely low voltage drop; 1.0V typical at 2A, 100°C
• Standard: Optimized for minimum saturation
    voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
    parameter distribution and higher efficiency than
    previous generation
• Industry standard TO-252AA package
   
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
   

 

Other manufacturer searches related to IRG4RC10S

Part NO. Description PDF Manufacturer
GA200SA60U Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A View Vishay Semiconductors
GA100NA60U Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A View Vishay Semiconductors
NGTG30N60FWG Insulated Gate Bipolar Transistor (IGBT) View ON Semiconductor
1MB12-140 INSULATED GATE BIPOLAR TRANSISTOR (IGBT) View Fuji Electric
GT8G131 Insulated Gate Bipolar Transistor Silicon N Channel IGBT View Toshiba
GT40T302 Insulated Gate Bipolar Transistor Silicon N Channel IGBT View Toshiba
5N150UF Insulated Gate Bipolar Transistor (IGBT) View Fairchild Semiconductor
GT50J301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT View Toshiba
GT8G133 Insulated Gate Bipolar Transistor Silicon N Channel IGBT View Toshiba
80J101B Insulated Gate Bipolar Transistor Silicon N Channel IGBT View Toshiba

Share Link : IR

All Rights Reserved © qdatasheet.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]