HiPerFET Power MOSFET
Single MOSFET Die
Features
• Conforms to SOT-227B outline
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
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