Features
● RF capable MOSFETs
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance
- easy to drive and to protect
● Fast intrinsic rectifier
Applications
● DC-DC converters
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
● 13.5 MHz industrial applications
● Pulse generation
● Laser drivers
● RF amplifiers
Advantages
● Space savings
● High power density
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