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JANTXV2N6786

  

Datasheet PDF - International Rectifier

JANTXV2N6786 image

Part Name
JANTXV2N6786

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7 Pages

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186.9 kB

MFG CO.
IR
International Rectifier 

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
■ ESD Rating: Class 1A per MIL-STD-750, Method 1020


Part Name
Description
PDF
MFC CO.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET™ TRANSISTORS THRU-HOLE (TO-204AA/AE)
New Jersey Semiconductor
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS
New Jersey Semiconductor
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR ( Rev : 1998 )
Infineon Technologies
Repetitive Avalanche Rated
New Jersey Semiconductor
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Infineon Technologies
High dv/dt and avalanche capabilities
Silikron Semiconductor Co.,LTD.
High dv/dt and avalanche capabilities
Silikron Semiconductor Co.,LTD.
High dv/dt and avalanche capabilities
Silikron Semiconductor Co.,LTD.
High dv/dt and avalanche capabilities
Silikron Semiconductor Co.,LTD.
High dv/dt and avalanche capabilities
Silikron Semiconductor Co.,LTD.

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