MFG CO.
NXP Semiconductors.
General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T.
Features
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
Applications
■ Electronic ballast for fluorescent lighting
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch mode power supply
Part Name
Description
PDF
MFC CO.
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 500 mA PNP low VCEsat (BISS) transistor
Philips Electronics
40 V, 500 mA PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved