MFG CO.
NXP Semiconductors.
General description
PNP/PNP double low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive
Part Name
Description
PDF
MFC CO.
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
100 V, 2.7 A PNP low VCEsat (BISS) transistor
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60 V, 2.7 A PNP low VCEsat (BISS) transistor
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30 V, 2.7 A PNP low VCEsat (BISS) transistor
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50 V, 2 A PNP low VCEsat (BISS) transistor
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50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics
50 V, 2 A PNP low VCEsat (BISS) transistor
Philips Electronics
50 V, 2 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved