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PBSS4350T

  

Datasheet PDF - Philips Electronics

PBSS4350T image

Part Name
PBSS4350T

Other PDF
  no available.

PDF

page
10 Pages

File Size
76.5 kB

MFG CO.
Philips
Philips Electronics 

DESCRIPTION
NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T.

FEATURES
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.

APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out(LDO).


Part Name
Description
PDF
MFC CO.
50 V; 3 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved

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