DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General Features
■ TYPICAL RDS(on) (N-Channel) = 0.045 Ω
■ TYPICAL RDS(on) (P-Channel) = 0.100 Ω
■ STANDARD OUTLINE FOR EASY
  AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC/DC CONVERTERS
■ BACK LIGHT INVERTER FOR LCD