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TC3889

  

Datasheet PDF - ETC1

TC3889 image

Part Name
TC3889

Other PDF
  no available.

PDF

page
1 Pages

File Size
158.5 kB

MFG CO.
ETC1
ETC1 ETC1

DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality

FEATURES
• 5W Typical Output Power
• 12dB Typical Linear Power Gain at 2.0GHz
• High Linearity: IP3 = 47 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BVDGO ≥ 18V
• Wg = 12 mm
• 100 % DC Tested
• Suitable for High Reliability Application


Part Name
Description
PDF
MFC CO.
2W Packaged Self-Bias PHEMT GaAs Power FETs
Transcom, Inc.
2 W Packaged Single-Bias PHEMT GaAs Power FETs ( Rev : 2008 )
Transcom, Inc.
7 W Packaged Single-Bias PHEMT GaAs Power FETs
Transcom, Inc.
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Unspecified
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs ( Rev : 2002 )
Transcom, Inc.
1 W Low-Cost Packaged PHEMT GaAs Power FETs
Transcom, Inc.
5 W Low-Cost Packaged PHEMT GaAs Power FETs
Transcom, Inc.

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