Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting
■ Electronic transformer for halogen lamps
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