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VI20100S-M3/4W

  

Datasheet PDF - Vishay Semiconductors

VI20100S-M3/4W image

Part Name
VI20100S-M3/4W

Other PDF
  no available.

PDF

page
5 Pages

File Size
127.6 kB

MFG CO.
Vishay
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
  For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

 


Part Name
Description
PDF
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Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TSC Corporation
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors

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