Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra High Brightness) Low Drive Current High Intensity Light Emission Clear Luminescence is obtained High Operating Temperture Standard Embossed Taping 8 mm Pitch : T10 (500 pcs/reel) Reflow Soldering is possible
Applications Automotive Use Message Signboard Backlight
General Description The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.
FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
Description : OPIC Light Detector for Infrared Communication (IrDA1.0 Compatible)
Features 1. IrDA1.0 compatible OPIC light detector (Transmission rate : 2.4 to 115.2kbps) 2. Compact design due to OPIC (Number of parts : 1) 3. Compatible with both 5V and 3V power supplies (Operating supply voltage : 2.7 to 5.5V) 4. Visible light cut-off type 5. Recommended use in combination emitter ( GL1F20)
Applications 1. Personal computers 2. Portable information terminal equipment 3. Printers 4. Word processors
Features For surface mounted application Metal silicon junction, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260°C / 10 seconds at terminals
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance