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3EZ36

  

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3EZ36[GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]

other part :3EZ100   3EZ11   3EZ110   3EZ12   3EZ120   3EZ13   3EZ130  

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts

FEATURES
● Low profile package
● Built-in strain relief
● Glass passivated junction
● Low inductance
● Excellent clamping capability
● Typical ID less than 1 A above 11V
● High temperature soldering : 260°C/10 seconds at terminals
● Plastic package has Underwriters Laboratory Flammability Classification 94V-O

Transys Electronics Limited
Transys-Electronics

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3EZ36[GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]

other part :3EZ11   3EZ12   3EZ13   3EZ14   3EZ15   3EZ16   3EZ17  

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts

FEATURES
● Low profile package
● Built-in strain relief
● Glass passivated junction
● Low inductance
● Excellent clamping capability
● Typical ID less than 1 A above 11V
● High temperature soldering : 260°C/10 seconds at terminals
● Plastic package has Underwriters Laboratory Flammability Classification 94V-O

Transys Electronics
Transys

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3EZ36[Silicon-Power-Zener Diodes (non-planar technology)]

other part :3EZ1   3EZ6.2   3EZ6.8   3EZ7.5   3EZ8.2   3EZ9.1   3EZ10  

• Maximum power dissipation     3 W
• Nominal Z-voltage                   1...200 V
• Plastic case                             DO-15
• Weight approx.                        0.4 g
• Plastic material has UL classification 94V-0
• Standard packaging taped in ammopack

Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard.
Other voltage tolerances and higher Zener voltages on request.

Diotec Semiconductor Germany
Diotec

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3EZ36[TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED JUNCTION ZENER DIODES]

other part :3EZ6.2   3EZ6.8   3EZ7.5   3EZ8.2   3EZ9.1   3EZ10   3EZ11  

VOLTAGE RANGE - 6.2 to 200 Volts CURRENT - 3.0 Watts

FEATURES
* Voltage Range:6.2V to 200V
* Build-in strain relief
* Glass passivated junction
* Low inductance
* Excellent clamping capability
* Low profile package

DC COMPONENTS
DC-Components

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3EZ36[SILICON ZENER DIODES]

other part :3EZ10   3EZ11   3EZ12   3EZ13   3EZ14   3EZ15   3EZ16  

VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts

FEATURES
• Low profile package
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives

PANJIT INTERNATIONAL
PanJit

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3EZ36[Zener silicon diodes]

other part :3EZ1   3EZ10   3EZ100   3EZ11   3EZ110   3EZ12   3EZ120  

Maximum Power
Dissipation: 3 W
Nominal Z-voltage: 1 to 200 V


Semikron
Semikron

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3EZ36[GLASS PASSIVATED JUNCTION SILI]

Transys Electronics Limited
TRSYS

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3EZ36D[3W SILICON ZENER DIODE]

other part :3EZ100D   3EZ100D1   3EZ100D10   3EZ100D2   3EZ100D3   3EZ100D4   3EZ100D5  


Jinan Gude Electronic Device
JGD

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3EZ36D[The 3EZ3.9D5 thru 3EZ200D5 series of axial-leaded 3.0 watt Zeners]

other part :3EZ100D   3EZ10D   3EZ110D   3EZ11D   3EZ120D   3EZ12D   3EZ130D  

The 3EZ3.9D5 thru 3EZ200D5 series of axial-leaded 3.0 watt Zeners provides voltage regulation selections with 5% tolerances from 3.9 to 200 volts in a DO-41 plastic package size. Other Zener voltage tolerances are also available by changing the suffix number to the tolerance desired such as 1, 2 3, or 4 for tighter tolerances or 10 for wider tolerance. These plastic encapsulated Zeners are also available in various military equivalent screening levels by adding a prefix identifier as also described in the Features section. They may be operated at high maximum dc currents or full power rating with adequate heat. Microsemi also offers numerous other Zener products to meet higher and lower power applications.

Microsemi Corporation
Microsemi

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3EZ36D5[3W SILICON ZENER DIODE]

other part :3EZ100D   3EZ100D1   3EZ100D10   3EZ100D2   3EZ100D3   3EZ100D4   3EZ100D5  


Jinan Gude Electronic Device
JGD

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