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BAR81W

  

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BAR81W[Silicon RF Switching Diode]

other part :Q62702-A1270  

• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss

Siemens AG
Siemens

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BAR81W[Silicon RF Switching Diode]

Features
●Design for use in shunt configuration
●High shunt signal isolation
●Low shunt insertion loss

KEXIN Industrial
Kexin

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BAR81W[Silicon RF Switching Diode]

Silicon RF Switching Diode

● Designed for use in shunt configuration in high performance RF switches
● High shunt signal isolation
● Low shunt insertion loss
● Optimized for short - open transformation using λ/4 lines

Infineon Technologies
Infineon

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BAR81W[Silicon RF Switching Diode]

Features
● Design for use in shunt configuration
● High shunt signal isolation
● Low shunt insertion loss

TY Semiconductor
Twtysemi

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