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BCP53-16

  

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BCP53-16_2008[PNP Silicon AF Transistors]

other part :BCP51_2008   BCP51-16_2008   BCP52-16_2008   BCP53-10_2008  

PNP Silicon AF Transistors

• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP54 ... BCP56 (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101

Infineon Technologies
Infineon

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BCP53-16_2011[PNP Silicon AF Transistors]

other part :BCP51_2011   BCP51-16_2011   BCP52-16_2011   BCP53-10_2011  

PNP Silicon AF Transistors

• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP54 ... BCP56 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Infineon Technologies
Infineon

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BCP53-16[PNP Silicon AF Transistors]

other part :BCP51   BCP52   BCP53   BCP51-10   BCP51-16   BCP52-10   BCP52-16  

PNP Silicon AF Transistors

● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BCP54...BCP56 (NPN)

Infineon Technologies
Infineon

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BCP53-16T3G_2013[PNP Silicon Epitaxial Transistors]

other part :BCP53_2013   BCP53T1G_2013   BCP53-16T1G_2013   BCP53-10T1G_2013   SBCP53-16T1G_2013   SBCP53-10T1G_2013  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering,
   eliminating the possibility of damage to the die
• Device Marking:
   BCP53T1 = AH
   BCP53−10T1 = AH−10
   BCP53−16T1 = AH−16
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC−Q101 Qualified and
   PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

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BCP53-16T3G_2015[PNP Silicon Epitaxial Transistors]

other part :BCP53_2015   BCP53T1G_2015   BCP53-16T1G_2015   BCP53-10T1G_2015   SBCP53-16T1G_2015   SBCP53-10T1G_2015   NSVBCP53-16T3G_2015  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering, eliminating
   the possibility of damage to the die
• Device Marking:
   BCP53T1G = AH
   BCP53−10T1G = AH−10
   BCP53−16T1G = AH−16
• S and NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View

BCP53-16T3G[PNP Silicon Epitaxial Transistors]

other part :BCP53   BCP53T1G   BCP53-16T1G   BCP53-10T1G   SBCP53-16T1G   SBCP53-10T1G   NSVBCP53-16T3G  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering, eliminating
   the possibility of damage to the die
• Device Marking:
   BCP53T1G = AH
   BCP53−10T1G = AH−10
   BCP53−16T1G = AH−16
• S and NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View

BCP53-16T1G_2011[PNP Silicon Epitaxial Transistors]

other part :BCP53_2011   SBCP53_2011   BCP53T1G_2011   BCP53-10T1G_2011   BCP53-16T3G_2011   SBCP53-16T1G_2011   SBCP53-10T1G_2011  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current: 1.5 A
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow. The
   formed leads absorb thermal stress during soldering, eliminating the
   possibility of damage to the die
• Device Marking:
   BCP53T1 = AH
   BCP53−10T1 = AH−10
   BCP53−16T1 = AH−16
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View

BCP53-16T1G_2013[PNP Silicon Epitaxial Transistors]

other part :BCP53_2013   BCP53T1G_2013   BCP53-10T1G_2013   BCP53-16T3G_2013   SBCP53-16T1G_2013   SBCP53-10T1G_2013  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering,
   eliminating the possibility of damage to the die
• Device Marking:
   BCP53T1 = AH
   BCP53−10T1 = AH−10
   BCP53−16T1 = AH−16
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC−Q101 Qualified and
   PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View

BCP53-16T1G_2015[PNP Silicon Epitaxial Transistors]

other part :BCP53_2015   BCP53T1G_2015   BCP53-10T1G_2015   BCP53-16T3G_2015   SBCP53-16T1G_2015   SBCP53-10T1G_2015   NSVBCP53-16T3G_2015  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering, eliminating
   the possibility of damage to the die
• Device Marking:
   BCP53T1G = AH
   BCP53−10T1G = AH−10
   BCP53−16T1G = AH−16
• S and NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View

BCP53-16T1G[PNP Silicon Epitaxial Transistors]

other part :BCP53   BCP53T1G   BCP53-10T1G   BCP53-16T3G   SBCP53-16T1G   SBCP53-10T1G   NSVBCP53-16T3G  

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering, eliminating
   the possibility of damage to the die
• Device Marking:
   BCP53T1G = AH
   BCP53−10T1G = AH−10
   BCP53−16T1G = AH−16
• S and NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

ON Semiconductor
ON-Semiconductor

View
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