Qdatasheet_Logo    Integrated circuits, Transistor, Semiconductors Search and Free Datasheet PDF Download Site
Part Number :
Home  >>>  FDS6679AZ Datasheet

FDS6679AZ

  

Datasheet PDF

Match, Like FDS6679AZ
Start with N/A
End N/A
Included N/A

FDS6679AZ_2006[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

View

FDS6679AZ_2008[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

View

FDS6679AZ[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

View
1
 
Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]