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FDS6680AS

  

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FDS6680AS_2008[30V N-Channel PowerTrench® SyncFET™]

General Description
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

Features
• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V
                        RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low
   RDS(ON) and fast switching
• High power and current handling capability

Applications
• DC/DC converter
• Low side notebooks

Fairchild Semiconductor
Fairchild

View

FDS6680AS[30V N-Channel PowerTrench® SyncFET™]

other part :FDS6680AS_NL  

General Description
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

Features
• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V
                        RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability

Applications
• DC/DC converter
• Low side notebooks

Fairchild Semiconductor
Fairchild

View

FDS6680AS_NL[30V N-Channel PowerTrench® SyncFET™]

other part :FDS6680AS  

General Description
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

Features
• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V
                        RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability

Applications
• DC/DC converter
• Low side notebooks

Fairchild Semiconductor
Fairchild

View
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