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FDS6982AS

  

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FDS6982AS[Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™]

other part :FDS6982AS_NL   FDS6982AS_NF40   FDS6982AS_NL40  

General Description
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.

Features
• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V
             RDS(on) max= 16.5mΩ @ VGS = 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V
             RDS(on) max= 35.0mΩ @ VGS = 4.5V
• Low gate charge (11nC typical)

Fairchild Semiconductor
Fairchild

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FDS6982AS_NL[Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™]

other part :FDS6982AS   FDS6982AS_NF40   FDS6982AS_NL40  

General Description
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.

Features
• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V
             RDS(on) max= 16.5mΩ @ VGS = 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V
             RDS(on) max= 35.0mΩ @ VGS = 4.5V
• Low gate charge (11nC typical)

Fairchild Semiconductor
Fairchild

View

FDS6982AS_NF40[Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™]

other part :FDS6982AS   FDS6982AS_NL   FDS6982AS_NL40  

General Description
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.

Features
• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V
             RDS(on) max= 16.5mΩ @ VGS = 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V
             RDS(on) max= 35.0mΩ @ VGS = 4.5V
• Low gate charge (11nC typical)

Fairchild Semiconductor
Fairchild

View

FDS6982AS_NL40[Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™]

other part :FDS6982AS   FDS6982AS_NL   FDS6982AS_NF40  

General Description
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.

Features
• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V
             RDS(on) max= 16.5mΩ @ VGS = 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V
             RDS(on) max= 35.0mΩ @ VGS = 4.5V
• Low gate charge (11nC typical)

Fairchild Semiconductor
Fairchild

View
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