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IRFP450

  

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IRFP450[14A, 500V, 0.400 Ohm, N-Channel Power MOSFET]

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 14A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Intersil
Intersil

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IRFP450[HEXFET® Power MOSFET]


International Rectifier
IR

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IRFP450[Power MOSFET]

other part :IRFP450PBF   SIHFP450-E3   SIHFP450  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

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IRFP450[N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET]

DESCRIPTION
This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.

. TYPICAL RDS(on)= 0.33 Ω
. EXTREMELY HIGH dv/dt CAPABILITY
. 100% AVALANCHE TESTED
. VERY LOWINTRINSIC CAPACITANCES
. GATE CHARGE MINIMIZED

APPLICATIONS
. HIGH CURRENT SWITCHING
. UNINTERRUPTIBLE POWER SUPPLY (UPS)
. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

New Jersey Semiconductor
NJSEMI

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IRFP450[N-Channel MOSFET Transistor]

DESCRIPTION
• Designed for use in switch mode power supplies and general purpose applications.

FEATURES
• Drain Current –ID= 14A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 500V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.4Ω(Max)
• Fast Switching

Inchange Semiconductor
Iscsemi

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IRFP450[N-CHANNEL POWER MOSFETS]

other part :IRFP451   IRFP452   IRFP453  


Samsung
Samsung

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IRFP450[N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET]

DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

STMicroelectronics
ST-Microelectronics

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IRFP450[Standard Power MOSFET]

N-Channel Enhancement Mode

Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
   - easy to drive and to protect
• Fast switching times

Applications
• Switch-mode and resonant-mode power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density

IXYS CORPORATION
IXYS

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IRFP450N[HEXFET® Power MOSFET]

Benefits
● Low Gate Charge Qg results in Simple Drive Requirement
● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Effective Coss Specified (See AN 1001)

Applications
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply
● High Speed Power Switching

International Rectifier
IR

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IRFP450N[Power MOSFET]

other part :IRFP450NPBF   SIHFP450N-E3   SIHFP450N  

FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free

APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
• PFC Boost

Vishay Siliconix
VISAY

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