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N0602N-S19-AY

  

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N0602N-S19-AY[N-CHANNEL MOSFET FOR SWITCHING]

other part :N0602N  

Description
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
• Low on-state resistance
   RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
   Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
   ID(DC) = ±100 A
• RoHS Compliant

 

Renesas Electronics
Renesas

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