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N25Q032A11EF4H0F[Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase]

other part :N25Q032A41ESFH0G   N25Q032A11E1240F   N25Q032A11E1240G   N25Q032A11E124XX   N25Q032A11E12A0E   N25Q032A11E12A0F   N25Q032A11E12A0G  

Device Description
The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) func tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

The memory is organized as 64 (64KB) main sectors that are further divided into 16 sub sectors each (1024 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole.
The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

Micron Technology

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