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SGB15N60HS

  

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SGB15N60HS_2005[High Speed IGBT in NPT-technology]

other part :G15N60HS_2005   P-TO-263-3-2_2005   Q67040-S4535_2005  

High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
   - parallel switching capability
   - moderate Eoff increase with temperature
   - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

Infineon Technologies
Infineon

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SGB15N60HS[High Speed IGBT in NPT-technology]

other part :G15N60HS   PG-TO-263-3-2   SGB15N60HSATMA2  

High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
   - parallel switching capability
   - moderate Eoff increase with temperature
   - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

Infineon Technologies
Infineon

View

SGB15N60HSATMA2[High Speed IGBT in NPT-technology]

other part :G15N60HS   PG-TO-263-3-2   SGB15N60HS  

High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
   - parallel switching capability
   - moderate Eoff increase with temperature
   - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

Infineon Technologies
Infineon

View
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