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STD14NM50N

  

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STD14NM50N[N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages]

other part :14NM50N   STB14NM50N   STF14NM50N   STI14NM50N   STP14NM50N  

Description
These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Applications
■ Switching applications

STMicroelectronics
ST-Microelectronics

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