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STD1NB80

  

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STD1NB80[N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH™ MOSFET]

other part :D1NB80   STD1NB80T4  

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ Process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

 

TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL

 

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT

STMicroelectronics
ST-Microelectronics

View

STD1NB80-[N-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET]

other part :D1NB80-1   STD1NB80-1  

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT

STMicroelectronics
ST-Microelectronics

View

STD1NB80-1[N-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET]

other part :D1NB80-1   STD1NB80-  

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT

STMicroelectronics
ST-Microelectronics

View

STD1NB80T4[N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH™ MOSFET]

other part :D1NB80   STD1NB80  

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ Process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

 

TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL

 

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT

STMicroelectronics
ST-Microelectronics

View
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