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STD2NK90Z

  

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STD2NK90Z_2004[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z_2004   P2NK90Z_2004   STP2NK90Z_2004   STD2NK90ZT4_2004   STD2NK90Z-1_2004  

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General Features   
■ TYPICAL RDS(on) = 5 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
    REPEATIBILITY
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
    ADAPTORS AND PFC
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90Z[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z   P2NK90Z   STP2NK90Z   STD2NK90ZT4   STD2NK90Z-1  

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General features   
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche rated
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90Z-1_2004[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z_2004   P2NK90Z_2004   STD2NK90Z_2004   STP2NK90Z_2004   STD2NK90ZT4_2004  

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General Features   
■ TYPICAL RDS(on) = 5 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
    REPEATIBILITY
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
    ADAPTORS AND PFC
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90Z-1_2018[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z_2018   P2NK90Z_2018   STP2NK90Z_2018   STD2NK90ZT4_2018  

Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
   
Features   
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
   
Applications
• Switching applications
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90Z-1[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z   P2NK90Z   STD2NK90Z   STP2NK90Z   STD2NK90ZT4  

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General features   
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche rated
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90ZT4_2004[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z_2004   P2NK90Z_2004   STD2NK90Z_2004   STP2NK90Z_2004   STD2NK90Z-1_2004  

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General Features   
■ TYPICAL RDS(on) = 5 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
    REPEATIBILITY
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
    ADAPTORS AND PFC
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90ZT4_2018[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z_2018   P2NK90Z_2018   STP2NK90Z_2018   STD2NK90Z-1_2018  

Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
   
Features   
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
   
Applications
• Switching applications
   

STMicroelectronics
ST-Microelectronics

View

STD2NK90ZT4[N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET]

other part :D2NK90Z   P2NK90Z   STD2NK90Z   STP2NK90Z   STD2NK90Z-1  

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
   
General features   
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche rated
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
   

STMicroelectronics
ST-Microelectronics

View
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