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2SC2209

  

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2SC2209[Silicon NPN Power Transistor]

other part :C2209  

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• High Collector Power Dissipation
• Complement to Type 2SA963

APPLICATIONS
• Designed for low frequency power amplification.

 Inchange Semiconductor
Iscsemi

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2SC2209[Silicon NPN epitaxial planar type]

other part :C2209  

Silicon NPN epitaxial planar type

For low-frequency power amplification
Complementary to 2SA0963

■ Features
• Large collector power dissipation PC
• Output of 5 W can be obtained by a complementary pair with 2SA0963

 Panasonic Corporation
Panasonic

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2SC2209[Silicon NPN Power Transistor]

other part :C2209  

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• High Collector Power Dissipation
• Complement to Type 2SA963

APPLICATIONS
• Designed for low frequency power amplification.

 New Jersey Semiconductor
NJSEMI

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