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6679

  

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FDS6679AZ_2008[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

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AP6679GJ[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

other part :6679GH   6679GJ   AP6679GH  

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is
available for low-profile applications.

▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic

Advanced Power Electronics Corp
APEC

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GE6679[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

E-Tech Electronics LTD
ETL

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AP6679GH[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

other part :6679GH   6679GJ   AP6679GJ  

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is
available for low-profile applications.

▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic

Advanced Power Electronics Corp
APEC

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AP6679GM-HF[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

▼Simple Drive Requirement
▼Low On-resistance
▼Fast Switching Characteristic
▼RoHS Compliant

Advanced Power Electronics Corp
APEC

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FDS6679AZ[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

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AP6679GJ-HF[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

other part :6679GH-HF   6679GJ-HF   AP6679GH-HF  

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.

▼Lower On-resistance
▼Simple Drive Requirement
▼Fast Switching Characteristic
▼RoHS Compliant

Advanced Power Electronics Corp
APEC

View

FDS6679AZ_2006[P-Channel PowerTrench® MOSFET]

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

Fairchild Semiconductor
Fairchild

View

AP6679GH-HF[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

other part :6679GH-HF   6679GJ-HF   AP6679GJ-HF  

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.

▼Lower On-resistance
▼Simple Drive Requirement
▼Fast Switching Characteristic
▼RoHS Compliant

Advanced Power Electronics Corp
APEC

View

GE6679[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

GTM CORPORATION
GTM

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