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ACE2301[P-Channel Enhancement Mode MOSFET]

ACE Technology Co., LTD.
ACE

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ACE2341B[P-Channel Enhancement Mode Field Effect Transistor]

other part :ACE2341BBM   ACE2341BBM-H  

Description
The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications.

Features
• VDS=-20V, ID=-4.1A
• RDS(ON)<65mΩ @ VGS=-4.5V
• RDS(ON)<85mΩ @ VGS=-2.5V
• RDS(ON)<125mΩ @ VGS=-1.8V

 

ACE Technology Co., LTD.
ACE

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ACE2341BBM[P-Channel Enhancement Mode Field Effect Transistor]

other part :ACE2341B   ACE2341BBM-H  

Description
The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications.

Features
• VDS=-20V, ID=-4.1A
• RDS(ON)<65mΩ @ VGS=-4.5V
• RDS(ON)<85mΩ @ VGS=-2.5V
• RDS(ON)<125mΩ @ VGS=-1.8V

 

ACE Technology Co., LTD.
ACE

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ACE2341BBM-H[P-Channel Enhancement Mode Field Effect Transistor]

other part :ACE2341B   ACE2341BBM  

Description
The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications.

Features
• VDS=-20V, ID=-4.1A
• RDS(ON)<65mΩ @ VGS=-4.5V
• RDS(ON)<85mΩ @ VGS=-2.5V
• RDS(ON)<125mΩ @ VGS=-1.8V

 

ACE Technology Co., LTD.
ACE

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