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AO4404

  

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AO4404A[N-Channel Enhancement Mode Field Effect Transistor]

other part :AO4404AL  

General Description
The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404A is Pb-free (meets ROHS & Sony 259 specifications). AO4404AL is a Green Product ordering option. AO4404A and AO4404AL are electrically identical.

Features
VDS(V) = 30V
ID= 8.5A (VGS= 10V)
RDS(ON) < 24mΩ(VGS= 10V)
RDS(ON)< 30mΩ(VGS= 4.5V)
RDS(ON)< 48mΩ(VGS= 2.5V)

Alpha and Omega Semiconductor
AOSMD

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AO4404AL[N-Channel Enhancement Mode Field Effect Transistor]

other part :AO4404A  

General Description
The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404A is Pb-free (meets ROHS & Sony 259 specifications). AO4404AL is a Green Product ordering option. AO4404A and AO4404AL are electrically identical.

Features
VDS(V) = 30V
ID= 8.5A (VGS= 10V)
RDS(ON) < 24mΩ(VGS= 10V)
RDS(ON)< 30mΩ(VGS= 4.5V)
RDS(ON)< 48mΩ(VGS= 2.5V)

Alpha and Omega Semiconductor
AOSMD

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AO4404[N-Channel Enhancement Mode Field Effect Transistor]

other part :AO4404L  

General Description
The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical.
    -RoHS Compliant
    -AO4404L is Halogen Free

Features
    VDS (V) = 30V
    ID = 8.5A (VGS = 10V)
    RDS(ON) < 24mΩ (VGS = 10V)
    RDS(ON) < 30mΩ (VGS = 4.5V)
    RDS(ON) < 48mΩ (VGS = 2.5V)

    UIS TESTED! Rg,Ciss,Coss,Crss Tested

Alpha and Omega Semiconductor
AOSMD

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AO4404[N-Channel MOSFET]

other part :KO4404  

■ Features
● VDS (V) = 30V
● ID = 8.5 A (VGS = 10V)
● RDS(ON) < 24mΩ (VGS = 10V)
● RDS(ON) < 30mΩ (VGS = 4.5V)
● RDS(ON) < 48mΩ (VGS = 2.5V)

KEXIN Industrial
Kexin

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AO4404B_2011[P-Channel Enhancement Mode Field Effect Transistor]

30V N-Channel MOSFET

General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
   
Product Summary
    VDS                                          30V
    ID (at VGS=10V)                     8.5A
    RDS(ON) (at VGS=10V)    < 24mΩ
    RDS(ON) (at VGS = 4.5V) < 30mΩ
    RDS(ON) (at VGS = 2.5V) < 48mΩ
    100% UIS Tested
    100% Rg Tested
   

Alpha and Omega Semiconductor
AOSMD

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AO4404B[P-Channel Enhancement Mode Field Effect Transistor]

General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404B is Pb-free (meets ROHS & Sony 259 specifications).
   
Features
    VDS (V) = 30V
    ID = 8.5A (VGS = 10V)
    RDS(ON) < 24mΩ (VGS = 10V)
    RDS(ON) < 30mΩ (VGS = 4.5V)
    RDS(ON) < 48mΩ (VGS = 2.5V)

                                                 UIS TESTED!
                                  Rg,Ciss,Coss,Crss Tested
   

Alpha and Omega Semiconductor
AOSMD

View

AO4404B[30V N-Channel MOSFET]

General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
   
Features
    VDS                                          30V
    ID (at VGS=10V)                     8.5A
    RDS(ON) (at VGS=10V)    < 24mΩ
    RDS(ON) (at VGS = 4.5V) < 30mΩ
    RDS(ON) (at VGS = 2.5V) < 48mΩ
   

Unspecified
SHENZHENFREESCALE

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AO4404B[30V N-Channel MOSFET]

General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
   
Product Summary
    VDS                                          30V
    ID (at VGS=10V)                     8.5A
    RDS(ON) (at VGS=10V)    < 24mΩ
    RDS(ON) (at VGS = 4.5V) < 30mΩ
    RDS(ON) (at VGS = 2.5V) < 48mΩ
   
    100% UIS Tested
    100% Rg Tested
   

shenzhen wanhexing Electronics Co.,Ltd
WHXPCB

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AO4404B[N-Channel MOSFET]

other part :KO4404B  

■ Features
● VDS (V) = 30V
● ID = 8.5 A (VGS = 10V)
● RDS(ON) < 24mΩ (VGS = 10V)
● RDS(ON) < 30mΩ (VGS = 4.5V)
● RDS(ON) < 48mΩ (VGS = 2.5V)
   

KEXIN Industrial
Kexin

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AO4404L[N-Channel Enhancement Mode Field Effect Transistor]

other part :AO4404  

General Description
The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical.
    -RoHS Compliant
    -AO4404L is Halogen Free

Features
    VDS (V) = 30V
    ID = 8.5A (VGS = 10V)
    RDS(ON) < 24mΩ (VGS = 10V)
    RDS(ON) < 30mΩ (VGS = 4.5V)
    RDS(ON) < 48mΩ (VGS = 2.5V)

    UIS TESTED! Rg,Ciss,Coss,Crss Tested

Alpha and Omega Semiconductor
AOSMD

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