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AOD407

  

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AOD407[P-Channel Enhancement Mode Field Effect Transistor]

General Description
The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

    -RoHS Compliant
    -Halogen Free*
   
Features
    VDS (V) = -60V
    ID = -12A (VGS = -10V)
    RDS(ON) < 115mΩ (VGS = -10V)
    RDS(ON) < 150mΩ (VGS = -4.5V)

    100% UIS tested
    100% RG tested
   

shenzhen wanhexing Electronics Co.,Ltd
WHXPCB

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AOD407[P-Channel 60-V (D-S) MOSFET]

other part :MCD407  

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
   
• Low rDS(on) provides higher efficiency and
    extends battery life
• Low thermal impedance copper leadframe
    DPAK saves board space
• Fast switching speed
• High performance trench technology
   

Unspecified
SHENZHENFREESCALE

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