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AUIRFZ44N[HEXFET® Power MOSFET]

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified

International Rectifier
IR

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AUIRF2805[HEXFET® Power MOSFET]

International Rectifier
IR

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AUIRFZ44V[MOSFET 60V, 55A, 16.5mOhm Automotive MOSFET]

International Rectifier
IR

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AUIRFZ44Z[MOSFET,N CH,55V,51A,TO220AB]

International Rectifier
IR

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AUIRF1405[N CHANNEL MOSFET, AUTOMOTIVE, 55V, 75A, TO-220AB]

International Rectifier
IR

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AUIRF3415[MOSFET N-CH 150V 43A TO-220AB]

International Rectifier
IR

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AUIRFU3607[HEXFET® Power MOSFET]

other part :AUIRFR3607   AUIRFR3607TR   AUIRFR3607TRL   AUIRFR3607TRR  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
 Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified

International Rectifier
IR

View

AUIRFU8405[AUTOMOTIVE GRADE]

other part :AUIRFR8405   AUIRFR8405TR   AUIRFR8405TRL   AUIRFR8405TRR  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.

Features
● Advanced Process Technology
● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Applications
● Electric Power Steering (EPS)
● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter

International Rectifier
IR

View

AUIRFU8405[AUTOMOTIVE GRADE]

other part :AUIRFR8405TRL   AUIRFR8405  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.

Features
● Advanced Process Technology
● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Applications
● Electric Power Steering (EPS)
● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter

Infineon Technologies
Infineon

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AUIRFZ44NL[HEXFET® Power MOSFET]

other part :AUIRFZ44NS  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified

International Rectifier
IR

View
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