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FQP9N50

  

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FQP9N50[500V N-Channel MOSFET]

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge.

Features
• 5.3 A, 500V, RDS(on)= 0.73 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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FQP9N50C[500V N-Channel MOSFET]

other part :FQPF9N50C   FQPF9N50CT  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

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