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SIHFR210T-E3[Power MOSFET]

other part :IRFR210   IRFR210PBF   IRFR210TR   IRFR210TRL   IRFR210TRLPBF   IRFR210TRPBF   IRFR210TRR  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

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ES1FR2G[Surface Mount Super Fast Rectifiers]

other part :ES1A   ES1AE2   ES1AE2G   ES1AE3   ES1AE3G   ES1AF2G   ES1AF3G  

FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain rellef
- Halogen-free according to IEC 61249-2-21 definition
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Moisture sensitivity level: level 1, per J-STD-020

 

Tiger Electronic
TGS

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IRFR224PBF[Power MOSFET]

other part :IRFR224TR   IRFR224TRL   IRFR224TRLPBF   IRFR224TRPBF   SIHFR224T   SIHFR224T-E3   SIHFR224TL  

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224/SiHFR224)
• Straight Lead (IRFU224/SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Kersemi Electronic Co., Ltd.
KERSEMI

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MC74HC165AFR2[8-Bit Serial or Parallel-Input Serial-Output Shift Register]

other part :MC74HC165ADT   MC74HC165AFL1   MC74HC165AFL2   MC74HC165AFR1   MC74HC165A_00   MC74HC165AN_00   MC74HC165AD_00  

8-Bit Serial or Parallel-Input/Serial-Output Shift Register
High–Performance Silicon–Gate CMOS

The MC74HC165A is identical in pinout to the LS165. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device is an 8–bit shift register with complementary outputs from the last stage. Data may be loaded into the register either in parallel or in serial form. When the Serial Shift/Parallel Load input is low, the data is loaded asynchronously in parallel. When the Serial Shift/Parallel Load input is high, the data is loaded serially on the rising edge of either Clock or Clock Inhibit (see the Function Table).
The 2–input NOR clock may be used either by combining two independent clock sources or by designating one of the clock inputs to act as a clock inhibit.

• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard No. 7A
• Chip Complexity: 286 FETs or 71.5 Equivalent Gates

ON Semiconductor
ON-Semiconductor

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16FR20MS02[Fast Recovery Diodes (Stud Version), 6/12/16 A]

other part :12F100MS02   12F100MS05   12F100S02   12F100S05   12F10MS02   12F10MS05   12F10S02  

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes

 

Vishay Semiconductors
Vishay

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IRFR224TRPBFA[Power MOSFET]

other part :IRFR224TR   IRFR224TRL   IRFR224TRLPBF   IRFR224TRPBF   SIHFR224T   SIHFR224T-E3   SIHFR224TL  

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224/SiHFR224)
• Straight Lead (IRFU224/SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Kersemi Electronic Co., Ltd.
KERSEMI

View

SIHFR210TL-E3[Power MOSFET]

other part :IRFR210   IRFR210PBF   IRFR210TR   IRFR210TRL   IRFR210TRLPBF   IRFR210TRPBF   IRFR210TRR  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Kersemi Electronic Co., Ltd.
KERSEMI

View

SIHFR224T-E3[Power MOSFET]

other part :IRFR224TRA   IRFR224TRLA   IRFR224TRLPBFA   IRFR224TRPBFA   SIHFR224T-E3A   SIHFR224TA   SIHFR224TL-E3A  

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224/SiHFR224)
• Straight Lead (IRFU224/SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

12FR20S05[Fast Recovery Diodes (Stud Version), 6/12/16 A]

other part :12F100MS02   12F100MS05   12F100S02   12F100S05   12F10MS02   12F10MS05   12F10S02  

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes

 

Vishay Semiconductors
Vishay

View

MC14011BFR2[B-Suffix Series CMOS Gates]

other part :MC14001BFL1   MC14001BFL2   MC14001BFR1   MC14001BFR2   MC14011BDT   MC14011BDTEL   MC14011BFL1  

The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.

• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• All Outputs Buffered
• Capable of Driving Two Low–power TTL Loads or One Low–power Schottky TTL Load Over the Rated Temperature Range.
• Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B
• Pin–for–Pin Replacements for Corresponding CD4000 Series B Suffix Devices

ON Semiconductor
ON-Semiconductor

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