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GE630[N-CHANNEL ENHANCEMENT MODE POWER MOSFET]

GTM CORPORATION
GTM

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GE6679[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

E-Tech Electronics LTD
ETL

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GE6679[P-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

GTM CORPORATION
GTM

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GE60N03[N-CHANNEL ENHANCEMENT MODE POWER MOSFET]

Description
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as DC/DC converters and high efficiency switching circuit.

Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching

 

GTM CORPORATION
GTM

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GE60T03[N-CHANNEL ENHANCEMENT MODE POWER MOSFET]

GTM CORPORATION
GTM

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GE60L02[N-CHANNEL ENHANCEMENT MODE POWER MOSFET]

GTM CORPORATION
GTM

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