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SIHFD110_2008[Power MOSFET]

other part :IRFD110PBF_2008   SIHFD110-E3_2008   IRFD110_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

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SIHFD110[Power MOSFET]

other part :IRFD110   IRFD110PBF   SIHFD110-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

Vishay Semiconductors
Vishay

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SIHFD110-E3_2008[Power MOSFET]

other part :IRFD110PBF_2008   IRFD110_2008   SIHFD110_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

SIHFD110-E3[Power MOSFET]

other part :IRFD110   IRFD110PBF   SIHFD110  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

Vishay Semiconductors
Vishay

View

SIHFD120[Power MOSFET]

other part :IRFD120PBF   SIHFD120-E3   IRFD120  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

View

SIHFD120-E3[Power MOSFET]

other part :IRFD120PBF   IRFD120   SIHFD120  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

View

SIHFD123[Power MOSFET]

other part :IRFD123   IRFD123PBF   SIHFD123-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

SIHFD123-E3[Power MOSFET]

other part :IRFD123   IRFD123PBF   SIHFD123  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

VHFD16[Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes]

other part :VHFD16-08IO1   VHFD16-12IO1   VHFD16-14IO1   VHFD16-16IO1  

VRRM = 800-1600 V
IdAVM = 21 A

Features
● Package with DCB ceramic base plate
● Isolation voltage 3600 V~
● Planar passivated chips
● Blocking voltage up to 1600 V
● Low forward voltage drop
● Leads suitable for PC board soldering
● UL registered E 72873

Applications
● Supply for DC power equipment
● DC motor control

Advantages
● Easy to mount with two screws
● Space and weight savings
● Improved temperature and power cycling

 

IXYS CORPORATION
IXYS

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VHFD16-08IO1[Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes]

other part :VHFD16   VHFD16-12IO1   VHFD16-14IO1   VHFD16-16IO1  

VRRM = 800-1600 V
IdAVM = 21 A

Features
● Package with DCB ceramic base plate
● Isolation voltage 3600 V~
● Planar passivated chips
● Blocking voltage up to 1600 V
● Low forward voltage drop
● Leads suitable for PC board soldering
● UL registered E 72873

Applications
● Supply for DC power equipment
● DC motor control

Advantages
● Easy to mount with two screws
● Space and weight savings
● Improved temperature and power cycling

 

IXYS CORPORATION
IXYS

View
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