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SIHFD120[Power MOSFET]

other part :IRFD120PBF   SIHFD120-E3   IRFD120  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

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SIHFD110-E3_2008[Power MOSFET]

other part :IRFD110PBF_2008   IRFD110_2008   SIHFD110_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

SIHFD110_2008[Power MOSFET]

other part :IRFD110PBF_2008   SIHFD110-E3_2008   IRFD110_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

SIHFD120-E3[Power MOSFET]

other part :IRFD120PBF   IRFD120   SIHFD120  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

View

SIHFD110-E3[Power MOSFET]

other part :IRFD110   IRFD110PBF   SIHFD110  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

Vishay Semiconductors
Vishay

View

SIHFD110[Power MOSFET]

other part :IRFD110   IRFD110PBF   SIHFD110-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

Vishay Semiconductors
Vishay

View

SIHFD123-E3[Power MOSFET]

other part :IRFD123   IRFD123PBF   SIHFD123  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View

SIHFD123[Power MOSFET]

other part :IRFD123   IRFD123PBF   SIHFD123-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

View
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