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MX29LV160CBXHI-70Q[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV160CTXHI-55G[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV800CTXHI-70Q[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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CAT28F512HI-12T[512K-Bit CMOS Flash Memory]

other part :CAT28F512   CAT28F512G-12   CAT28F512G-12T   CAT28F512G-15   CAT28F512G-15T   CAT28F512G-90   CAT28F512G-90T  

DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.
The CAT28F512 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages.

FEATURES
■ Fast Read Access Time: 90/120/150 ns
■ Low Power CMOS Dissipation:
   –Active: 30 mA max (CMOS/TTL levels)
   –Standby: 1 mA max (TTL levels)
   –Standby: 100 µA max (CMOS levels)
■ High Speed Programming:
   –10 µs per byte
   –1 Sec Typ Chip Program
■ 12.0V ± 5% Programming and Erase Voltage
■ Electronic Signature
■ Commercial, Industrial and Automotive Temperature Ranges
■ Stop Timer for Program/Erase
■ On-Chip Address and Data Latches
■ JEDEC Standard Pinouts:
   –32-pin DIP
   –32-pin PLCC
   –32-pin TSOP ( 8 x 20)
■ 100,000 Program/Erase Cycles
■ 10 Year Data Retention
■ "Green" Package Options Available

ON Semiconductor
ON-Semiconductor

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MX29LV160CBXHI-55Q[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV800CTXHI-90[8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV800CBMC-45   MX29LV800CBMC-45R   MX29LV800CBMC-55   MX29LV800CBMC-55R   MX29LV800CBMC-70   MX29LV800CBMC-70R   MX29LV800CBMC-90  

GENERAL DESCRIPTION
The MX29LV800C T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800C T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
   - 3.0V only operation for read, erase and program operation
• Fast access time: 45R/55R/70/90ns
• Low power consumption
   - 30mA maximum active current
   - 0.2uA typical standby current
• Command register architecture
   - Byte/word Programming (9us/11us typical)
   - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Fully compatible with MX29LV800BT/BB device
• Auto Erase (chip & sector) and Auto Program
   - Automatically erase any combination of sectors with Erase Suspend capability
   - Automatically program and verify data at specified address
• Erase suspend/Erase Resume
   - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase
• Status Reply
   - Data# polling & Toggle bit for detection of program and erase operation completion
• Ready/Busy# pin (RY/BY#)
   - Provides a hardware method of detecting program or erase operation completion
• Sector protection
   - Hardware method to disable any combination of sectors from program or erase operations
   - Temporary sector unprotected allows code changes in previously locked sectors.
• CFI (Common Flash Interface) compliant
   - Flash device parameters stored on the device and provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
   - T = Top Boot Sector
   - B = Bottom Boot Sector
• Package type:
   - 44-pin SOP
   - 48-pin TSOP
   - 48-ball CSP (6 x 8mm)
   - 48-ball CSP (4 x 6mm)
   - All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
   - Pinout and software compatible with single-power supply Flash
• 10 years data retention

 

Macronix International
MCNIX

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MX29LV160CBXHI-90G[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV800CTXHI-55Q[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV800CTXHI-90G[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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MX29LV400CBXHI-45G[SINGLE VOLTAGE 3V ONLY FLASH MEMORY]

other part :MX29LV160C   MX29LV160CB   MX29LV160CBGBC-45G   MX29LV160CBGBC-45Q   MX29LV160CBGBC-55G   MX29LV160CBGBC-55Q   MX29LV160CBGBC-70G  

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

Macronix International
MCNIX

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