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IIRF1010Z[N-Channel MOSFET Transistor]

other part :IRF1010Z  

• DESCRITION
• reliable device for use in a wide variety of applications

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤7.5mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

Inchange Semiconductor
Iscsemi

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AUIRF2804S-7P[HEXFET® Power MOSFET]

VDSS = 40V
RDS(on) = 1.6mΩ
ID = 160A

Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 

International Rectifier
IR

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AUIRF2805L[HEXFET® Power MOSFET]

other part :AUIRF2805S   AUIRF2805STRL   AUIRF2805STRR  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

International Rectifier
IR

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AUIRF2805S[HEXFET® Power MOSFET]

other part :AUIRF2805L   AUIRF2805STRL   AUIRF2805STRR  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

International Rectifier
IR

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AUIRF2805STRL[HEXFET® Power MOSFET]

other part :AUIRF2805L   AUIRF2805S   AUIRF2805STRR  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

International Rectifier
IR

View

AUIRF2805STRR[HEXFET® Power MOSFET]

other part :AUIRF2805L   AUIRF2805S   AUIRF2805STRL  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

International Rectifier
IR

View

IIRF3708[N-Channel MOSFET Transistor]

other part :IRF3708  

• DESCRITION
• reliable device for use in a wide variety of applications

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤12mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

Inchange Semiconductor
Iscsemi

View

AUIRF3805L-7P[HEXFET® Power MOSFET]

other part :AUIRF3805S-7P  

V(BR)DSS 55V
RDS(on) typ. 2.0mΩ
           max. 2.6mΩ
ID 240A

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 

International Rectifier
IR

View

AUIRF3805S-7P[HEXFET® Power MOSFET]

other part :AUIRF3805L-7P  

V(BR)DSS 55V
RDS(on) typ. 2.0mΩ
           max. 2.6mΩ
ID 240A

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 

International Rectifier
IR

View

AUIRF7309Q[HEXFET Power MOSFET]

other part :AUIRF7309QTR  

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
  Advanced Planar Technology
  Low On-Resistance
  Dual N and P Channel MOSFET
  Dynamic dV/dT Rating
  150°C Operating Temperature
  Fast Switching
  Lead-Free, RoHS Compliant
  Automotive Qualified*

 

International Rectifier
IR

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