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Start with IRF-* IRF0* IRF1* IRF2* IRF3* IRF4* IRF5* IRF6* IRF7* IRF8* IRF9* IRFA* IRFB* IRFC* IRFD* IRFE* IRFF* IRFH* IRFI* IRFL* IRFM* IRFN* IRFP* IRFR* IRFS* IRFU* IRFV* IRFW* IRFY* IRFZ*
End *8IRF *UIRF *1IRF *-IRF *NIRF *LIRF
Included *IRF1* *IRF2* *IRF3* *IRF4* *IRF7* *IRF8* *IRF9* *IRFB* *IRFI* *IRFL* *IRFN* *IRFP* *IRFQ* *IRFR* *IRFS* *IRFU* *IRFZ*

AUIRFR4105Z[HEXFET® Power MOSFET]

other part :AUIRFU4105Z   AUIRFR4105ZTRL  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Infineon Technologies
Infineon

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AUIRFBA1405[HEXFET® Power MOSFET]

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com
bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

 

International Rectifier
IR

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AUIRFR8405[AUTOMOTIVE GRADE]

other part :AUIRFR8405TR   AUIRFR8405TRL   AUIRFR8405TRR   AUIRFU8405  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.

Features
● Advanced Process Technology
● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Applications
● Electric Power Steering (EPS)
● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter

International Rectifier
IR

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AUIRFR8405TRR[AUTOMOTIVE GRADE]

other part :AUIRFR8405   AUIRFR8405TR   AUIRFR8405TRL   AUIRFU8405  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.

Features
● Advanced Process Technology
● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Applications
● Electric Power Steering (EPS)
● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter

International Rectifier
IR

View

AUIRFR/U4105Z[HEXFET® Power MOSFET]

other part :AUIRFR4105ZTR   AUIRFU4105ZTR   AUIRFR4105ZTRL   AUIRFU4105ZTRL   AUIRFR4105Z   AUIRFU4105Z  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive ava lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

International Rectifier
IR

View

AUIRFU4105ZTRL[HEXFET® Power MOSFET]

other part :AUIRFR/U4105Z   AUIRFR4105ZTR   AUIRFU4105ZTR   AUIRFR4105ZTRL   AUIRFR4105Z   AUIRFU4105Z  

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive ava lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

International Rectifier
IR

View

AUIRF2805STRL[HEXFET® Power MOSFET]

other part :AUIRF2805L   AUIRF2805S   AUIRF2805STRR  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

International Rectifier
IR

View

AUIRFR4105TR[HEXFET® Power MOSFET]

other part :AUIRFR4105   AUIRFR4105TRL   AUIRFR4105TRR  

AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
● Advanced Planar Technology
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Infineon Technologies
Infineon

View

AUIRFZ44NS[HEXFET® Power MOSFET]

other part :AUIRFZ44NL  

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified

International Rectifier
IR

View

AUIRF7309Q[HEXFET Power MOSFET]

other part :AUIRF7309QTR  

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features
  Advanced Planar Technology
  Low On-Resistance
  Dual N and P Channel MOSFET
  Dynamic dV/dT Rating
  150°C Operating Temperature
  Fast Switching
  Lead-Free, RoHS Compliant
  Automotive Qualified*

 

International Rectifier
IR

View
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