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IRF044[REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)]

Product Summary
The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling

International Rectifier
IR

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IRF044[N-Channel MOSFET Transistor]

DESCRIPTION
• Drain Current ID=44A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 60V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.028Ω(Max)
• Simple Drive Requirements

APPLICATIONS
• Switching power supplies
• Motor controls,Inverters and Choppers
• Audio amplifiers and high energy pulse circuits.

Inchange Semiconductor
Iscsemi

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IRF044[N–CHANNEL POWER MOSFET]

FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE

Semelab - > TT Electronics plc
Semelab

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IRF054[REPETITIVE AVALANCHE AND dv/dt RATED HEXFET™ TRANSISTORS THRU-HOLE (TO-204AA/AE)]

New Jersey Semiconductor
NJSEMI

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IRF034[60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE) ]

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis tance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

International Rectifier
IR

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IRF054[REPETITIVE AVALANCHE AND dv/dt RATED HEXFET™ TRANSISTORS THRU-HOLE (TO-204AA/AE)]

60V, N-CHANNEL

The HEXFET™ technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis tance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

International Rectifier
IR

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IRF064N[HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A]

other part :IRFP064N  

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

International Rectifier
IR

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IRF044SMD[N–CHANNEL POWER MOSFET]

FEATURES
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES

Semelab - > TT Electronics plc
Semelab

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IRF054SMD[N–CHANNEL POWER MOSFET]

VDSS 60V
ID(cont) 45A
RDS(on) 0.027W

FEATURES
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
 

Semelab - > TT Electronics plc
Semelab

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System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

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