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IRF4

  

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IRF453[N-CHANNEL POWER MOSFETS]

other part :IRF250   IRF251   IRF252   IRF253   IRF450   IRF451   IRF452  

FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)

 

New Jersey Semiconductor
NJSEMI

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IRF452[N-CHANNEL POWER MOSFETS]

other part :IRF250   IRF251   IRF252   IRF253   IRF450   IRF451   IRF453  

FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)

 

New Jersey Semiconductor
NJSEMI

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IRF451[N-CHANNEL POWER MOSFETS]

other part :IRF250   IRF251   IRF252   IRF253   IRF450   IRF452   IRF453  

FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)

 

New Jersey Semiconductor
NJSEMI

View

IRF450[N-CHANNEL POWER MOSFETS]

other part :IRF250   IRF251   IRF252   IRF253   IRF451   IRF452   IRF453  

FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)

 

New Jersey Semiconductor
NJSEMI

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IRF420[N-Channel MOSFET Transistor]

DESCRIPTION
·silicon Gate for fast switching at elevate
·rugged
·low drive requirements
·ease of paralleling

APPLICATIONS
·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver.

Inchange Semiconductor
Iscsemi

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IRF422[2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs]

other part :IRF420   IRF421   IRF423  

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON) = 3.0Ω and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Intersil
Intersil

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IRF440[8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package]

other part :IRF441   IRF442   IRF443   IRF840   IRF841   IRF842   IRF843  

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Fairchild Semiconductor
Fairchild

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IRF423[2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs]

other part :IRF420   IRF421   IRF422  

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON)= 3-Ofi and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature

New Jersey Semiconductor
NJSEMI

View

IRF420[N-Channel Power MOSFETs, 3.0 A, 450 V/500 V]

other part :IRF420-423   IRF421   IRF422   IRF423   IRF820   IRF820-823   IRF821  


Fairchild Semiconductor
Fairchild

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IRF421[N-CHANNEL POWER MOSFETS]

other part :IRF420   IRF422   IRF423  

Samsung
Samsung

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