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IRF710[2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET]

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17444.

Features
• 2.0A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Intersil
Intersil

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IRF720[Power MOSFET]

other part :IRF720PBF   SIHF720   SIHF720-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

 

Vishay Semiconductors
Vishay

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IRF713[N-Channel Power MOSFETs, 2.25 A, 350-400 V]

other part :IRF710   IRF711   IRF712   MTP2N35   MTP2N40  

Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.

• Low RDS(on)
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on). Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling

 

Fairchild Semiconductor
Fairchild

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IRF721[HEXFET Power MOSFETs]

other part :IRF510   IRF511   IRF512   IRF513   IRF521   IRF522   IRF523  

[IR]

HEXFET Power MOSFETs

Plastic Insertable Package

TO-220 N-Channel

Unspecified
ETC

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IRF710[2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET]

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17444.

Features
• 2.0A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Intersil
Intersil

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IRF720[N-Channel Mosfet Transistor]

DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies, UPS,AC and DC motor controls,relay and solenoid drivers.

FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements

 

Inchange Semiconductor
Iscsemi

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IRF712[N-Channel Power MOSFETs, 2.25 A, 350-400 V]

other part :IRF710   IRF711   IRF713   MTP2N35   MTP2N40  

Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.

• Low RDS(on)
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on). Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling

 

New Jersey Semiconductor
NJSEMI

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IRF711[N-Channel Power MOSFETs, 2.25 A, 350-400 V]

other part :IRF710   IRF712   IRF713   MTP2N35   MTP2N40  

Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.

• Low RDS(on)
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on). Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling

 

New Jersey Semiconductor
NJSEMI

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IRF733[HEXFET Power MOSFETs]

other part :IRF510   IRF511   IRF512   IRF513   IRF521   IRF522   IRF523  

[IR]

HEXFET Power MOSFETs

Plastic Insertable Package

TO-220 N-Channel

Unspecified
ETC

View

IRF711[HEXFET Power MOSFETs]

other part :IRF510   IRF511   IRF512   IRF513   IRF521   IRF522   IRF523  

[IR]

HEXFET Power MOSFETs

Plastic Insertable Package

TO-220 N-Channel

Unspecified
ETC

View
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