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IRFF230[N-CHANNEL ENHANCEMENT MODE TRANSISTOR]

other part :2N6798  

FEATURES
• V(BR)DSS = 200V
• ID = 5.5A
• RDSON = 0.40Ω

Semelab - > TT Electronics plc
Semelab

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IRFF310[REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE-TO-205AF (TO-39)]

other part :JANTX2N6786   JANTXV2N6786   MIL-PRF-19500/556  

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
■ ESD Rating: Class 1A per MIL-STD-750, Method 1020

International Rectifier
IR

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IRFF230[5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET]

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 5.5A, 200V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Intersil
Intersil

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IRFF123[N-Channel Enhancement-Mode Power Field-Effect Transistor]

other part :IRFF120   IRFF121   IRFF122  

GE Solid State
GESS

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IRFF121[N-Channel Enhancement-Mode Power Field-Effect Transistor]

other part :IRFF120   IRFF122   IRFF123  

GE Solid State
GESS

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IRFF120[N-Channel Enhancement-Mode Power Field-Effect Transistor]

other part :IRFF121   IRFF122   IRFF123  

GE Solid State
GESS

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IRFF122[N-Channel Enhancement-Mode Power Field-Effect Transistor]

other part :IRFF120   IRFF121   IRFF123  

GE Solid State
GESS

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IRFF132[Power MOS Field-Effect Transistors]

other part :IRFF130   IRFF131   IRFF133  

N-Channel Enhancement-Mode Power Field-Effect Transistors

7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

GE Solid State
GESS

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IRFF130[Power MOS Field-Effect Transistors]

other part :IRFF131   IRFF132   IRFF133  

N-Channel Enhancement-Mode Power Field-Effect Transistors

7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

GE Solid State
GESS

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IRFF133[Power MOS Field-Effect Transistors]

other part :IRFF130   IRFF131   IRFF132  

N-Channel Enhancement-Mode Power Field-Effect Transistors

7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

GE Solid State
GESS

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